1x Black (Open Box) in stock. 

Harmony GaNM is a high-performance Class-D power amplifier based on advanced GaN technology (gallium nitride). It is engineered for speed, precision, and musicality, delivering extremely low distortion, lightning-fast transients, and effortless control over demanding speakers — all in a compact, efficient form. Experience the clarity and dynamics of next-generation amplification.

Highlights

Unified Design of the Harmony Series: The Harmony series is designed to perfectly complement the rest of the series, with a matching footprint, a sleek form factor, and a unified aesthetic for a wonderfully stackable setup.

GaN System Technology: Based on next-generation GaN FETs, offering ultra-fast switching speeds, lower distortion, and improved efficiency for a finer and more dynamic sound.

Ultra low-noise power supply: The meticulously crafted audio-quality switching power supply minimizes noise and interference, preserving even the finest microdetails in your music.

True symmetrical high output power: The fully symmetrical topology is engineered for serious performance and delivers 200 W of clean, powerful output per channel with effortless control and musicality.

Unified design philosophy.

The unified design philosophy focuses not only on aesthetics but also on practical integration. Thoughtful considerations such as aligned display windows, uniform control surfaces, and the appropriate placement of power supplies and I/Os make setup intuitive and user-friendly.

This approach reduces visual clutter and enhances the sense of cohesion, allowing users to focus on their music — not on managing cables or mismatched devices.

Unibody CNC aerospace-grade aluminum.

Crafted from a single block of aerospace-grade aluminum with precise CNC machining, the Harmony GaNM offers exceptional durability, a refined finish, and effective heat dissipation while radiating premium quality.

GaN system technology.

The heart of the Harmony GaNM is the GaN system technology, which uses advanced gallium nitride (GaN) transistors to deliver exceptional speed, efficiency, and sound purity. Unlike conventional silicon-based designs, GaN transistors switch faster, with lower losses and significantly reduced distortion. This allows the amplifier to respond much more agilely and controlled to music signals, resulting in effortlessly dynamic, transparent sound free from the limitations of traditional amplifiers.

Infineon Silicon Carbide CoolSiC™ MOSFETs

Robust protection circuits

From overvoltage and overcurrent protection to input undervoltage and overvoltage shielding – for safe operation under all conditions. It supports a wide input voltage range (90-264Vac) for worldwide compatibility and meets strict EMI standards suitable for medical applications.

With its fanless high-density design and ripple suppression features, this power supply guarantees both quiet operation and excellent electromagnetic compatibility, allowing the music to play without distraction.

True balanced high output power.

The Harmony GaNM is equipped with a true balanced architecture, meaning both the input and output stages operate symmetrically with fully isolated signal paths for the positive and negative phases.

This ensures that common-mode noise is effectively suppressed, resulting in an extremely clean signal with improved dynamic range and lower distortion. By eliminating grounding issues common in single-ended designs, a true balanced output provides a more stable, low-noise connection, which is especially beneficial in high-resolution audio systems with reference quality.

With a power of 200 watts per channel at 8 ohms, the Harmony GaNM offers enough headroom to effortlessly drive even demanding speakers with precision and authority.

This high output power is maintained without losing detail or finesse, providing an engaging and transparent sound experience. Whether you listen at low levels or turn up the volume, the amplifier maintains full composure and preserves musical nuances and control across the entire frequency spectrum.